 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Triacs Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. * Blocking Voltage to 800 Volts * All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability * Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability * Gate Triggering Guaranteed in Three Modes (MAC15FP Series) or Four Modes (MAC15AFP Series) MAC15FP Series MAC15AFP Series ISOLATED TRIACs THYRISTORS 15 AMPERES RMS 200 thru 800 VOLTS MT2 G MT1 CASE 221C-02 STYLE 3 MAXIMUM RATINGS (TJ = 25C unless otherwise noted.) Rating Repetitive Peak Off-State Voltage(1) (TJ = -40 to +125C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC15-4FP, MAC15A4FP MAC15-6FP, MAC15A6FP MAC15-8FP, MAC15A8FP MAC15-10FP, MAC15A10FP On-State RMS Current (TC = +80C)(2) Full Cycle Sine Wave 50 to 60 Hz (TC = +95C) Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +80C) preceded and followed by rated current Peak Gate Power (TC = +80C, Pulse Width = 2 s) Average Gate Power (TC = +80C, t = 8.3 ms) Peak Gate Current Peak Gate Voltage RMS Isolation Voltage (TA = 25C, Relative Humidity Operating Junction Temperature Storage Temperature Range Symbol VDRM 200 400 600 800 IT(RMS) ITSM PGM PG(AV) IGM 15 12 150 20 0.5 2 10 1500 -40 to +125 -40 to +150 Amps Amps Watts Watt Amps Volts Volts C C Value Unit Volts p 20%) VGM V(ISO) TJ Tstg 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. Motorola Thyristor Device Data 3-63 MAC15FP Series MAC15AFP Series THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Thermal Resistance, Junction to Ambient Symbol RJC RCS RJA Max 2 2.2 (typ) 60 Unit C/W C/W C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Peak Blocking Current (Either Direction) TJ = 25C (VD = Rated VDRM, TJ = 125C, Gate Open) Peak On-State Voltage (Either Direction) (ITM = 21 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) "A" SUFFIX ONLY Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) "A" SUFFIX ONLY (Main Terminal Voltage = Rated VDRM, RL = 10 k, TJ = +110C) MT2(+), G(+); MT2(-), G(-); MT2(+), G(-) MT2(-), G(+) "A" SUFFIX ONLY Holding Current (Either Direction) (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 200 mA) Turn-On Time (VD = Rated VDRM, ITM = 17 A, IGT = 120 mA, Rise Time = 0.1 s, Pulse Width = 2 s) Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 21 A, Commutating di/dt = 7.6 A/ms, Gate Unenergized, TC = 80C) QUADRANT DEFINITIONS MT2(+) QUADRANT II MT2(+), G(-) QUADRANT I MT2(+), G(+) Symbol IDRM Min -- -- -- Typ -- -- 1.3 Max 10 2 1.6 Unit A mA Volts mA -- -- -- -- VGT -- -- -- -- 0.2 0.2 IH -- 0.9 0.9 1.1 1.4 -- -- 6 2 2 2 2.5 -- -- 40 mA -- -- -- -- 50 50 50 75 Volts p 2%) VTM IGT tgt -- 1.5 -- s dv/dt(c) -- 5 -- V/s Trigger devices are recommended for gating on Triacs. They provide: 1. Consistent predictable turn-on points. 2. Simplified circuitry. 3. Fast turn-on time for cooler, more efficient and reliable operation. ELECTRICAL CHARACTERISTICS of RECOMMENDED BIDIRECTIONAL SWITCHES G(+) Usage Part Number VS MBS4991 6-10 V 350 A Max 0.5 V Max General MBS4992 7.5-9 V 120 A Max 0.2 V Max G(-) QUADRANT III MT2(-), G(-) QUADRANT IV MT2(-), G(+) IS VS1-VS2 MT2(-) Temperature Coefficient 0.02%/C Typ 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage. 3-64 Motorola Thyristor Device Data MAC15FP Series MAC15AFP Series TYPICAL CHARACTERISTICS 130 30 120 60 90 110 125C 100 150 to 180 90 80 0 = CONDUCTION ANGLE 2 6 8 10 12 IT(RMS), RMS ON-STATE CURRENT (AMP) 4 14 16 dc IGTM, GATE TRIGGER CURRENT (NORMALIZED) , 3 2 OFF-STATE VOLTAGE = 12 Vdc ALL MODES TC , CASE TEMPERATURE ( C) 1 0.7 0.5 0.3 -60 -40 -20 0 20 40 60 80 TJ, JUNCTION TEMPERATURE (C) 100 120 140 Figure 1. RMS Current Derating PD(AV) , AVERAGE POWER DISSIPATION (WATTS) 20 16 100 120 dc 90 60 30 30 20 70 50 Figure 4. Typical Gate Trigger Current = 180 TJ = 125C TJ = 25C 125C 12 8 = CONDUCTION ANGLE 4 0 0 2 4 6 8 10 12 14 16 IT(RMS), RMS ON-STATE CURRENT (AMP) i F , INSTANTANEOUS FORWARD CURRENT (AMP) 10 7 5 3 2 Figure 2. On-State Power Dissipation VGTM , GATE TRIGGER VOLTAGE (NORMALIZED) 3 2 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 1 0.7 0.5 0.3 0.2 1 0.7 0.5 0.3 -60 -40 -20 0 20 40 60 80 100 120 140 0.1 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.4 TJ, JUNCTION TEMPERATURE (C) vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 3. Typical Gate Trigger Voltage Figure 5. Maximum On-State Characteristics Motorola Thyristor Device Data 3-65 MAC15FP Series MAC15AFP Series 3 I H , HOLDING CURRENT (NORMALIZED) 2 I TSM , PEAK SURGE CURRENT (AMP) GATE OPEN APPLIES TO EITHER DIRECTION 300 200 1 0.7 0.5 100 70 50 TC = 80C f = 60 Hz SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 1 2 3 5 NUMBER OF CYCLES 7 10 0.3 -60 30 -40 -20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (C) Figure 6. Typical Holding Current 1 0.5 0.2 Figure 7. Maximum Nonrepetitive Surge Current r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) ZJC(t) = r(t) * RJC 0.1 0.05 0.02 0.01 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1k 2k 5k 10 k t, TIME (ms) Figure 8. Thermal Response 3-66 Motorola Thyristor Device Data |
Price & Availability of MAC15-4FP
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |